Minimum output signal FET
Medium oscillator signal FET
Metal oxide semiconductor FET
Metal orgamic serial FET
440 V
1000 V
5000 V
6000 V
Low input impedance
High input impedance
Medium input impedance
Infinity input impedence
Fast switching speed
Slow switching speed
Higher power gate signal
Low thermal ionisation of electron-holes
Superior current conduction capability
Low gate signal power requirements
Very low on-state voltage
Low driving power