In the middle of the depletion layer of a reverse biased p-n-junction, the electric field is maximum
53) In the middle of the depletion layer of a reverse biased p-n-junction, the
electric field is maximum
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crystal structure
The difference in variation of resistance with temperature in a metal and semiconductor is due to crystal structure
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ALPHA (?):?It is a large signal current gain in common base configuration. It is the ratio of collector current (output current) to the emitter current (input current).It is a current gain in CB amplifier and it indicates that the amount of emitter current reaching to collector. Its value is unity ideally and practically less than unity. Beta (?): It is a current gain factor in the common emitter configuration. It is the ration of collector current (output current) to base current (output current).
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ALPHA (?):?It is a large signal current gain in common base configuration. It is the ratio of collector current (output current) to the emitter current (input current).It is a current gain in CB amplifier and it indicates that the amount of emitter current reaching to collector. Its value is unity ideally and practically less than unity. Beta (?): It is a current gain factor in the common emitter configuration. It is the ration of collector current (output current) to base current (output current).
a bond is broken on the N- side and the electron freed from the bond jumps to
ALPHA (?):?It is a large signal current gain in common base configuration. It is the ratio of collector current (output current) to the emitter current (input current).It is a current gain in CB amplifier and it indicates that the amount of emitter current reaching to collector. Its value is unity ideally and practically less than unity. Beta (?): It is a current gain factor in the common emitter configuration. It is the ration of collector current (output current) to base current (output current).